A method for programming a target memory cell in a memory array of a non-volatile memory system, the method comprising defining a default read biasing voltage value and a default verify biasing voltage value for each program state of a target memory cell of a memory structure, determining a location of a target memory cell within the memory structure and, based upon the determined location of the target memory cell, applying a first incremental offset voltage to the default read biasing voltage value with respect to each program state, and applying a second incremental offset voltage to the default verify biasing voltage value with respect to each program state.