Invention Grant
- Patent Title: High-voltage devices integrated on semiconductor-on-insulator substrate
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Application No.: US16876098Application Date: 2020-05-17
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Publication No.: US11552192B2Publication Date: 2023-01-10
- Inventor: Ruchil Kumar Jain , Alban Zaka
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agent Anthony Canale
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/762 ; H01L29/66

Abstract:
The present disclosure generally to semiconductor devices, and more particularly to semiconductor devices having high-voltage transistors integrated on a semiconductor-on-insulator substrate and methods of forming the same. The present disclosure provides a semiconductor device including a bulk substrate, a semiconductor layer above the bulk substrate, an insulating layer between the semiconductor layer and the bulk substrate, a source region and a drain region on the bulk substrate, a gate dielectric between the source region and the drain region, the gate dielectric having a first portion on the bulk substrate and a second portion on the semiconductor layer, and a gate electrode above the gate dielectric.
Public/Granted literature
- US20210359130A1 HIGH-VOLTAGE DEVICES INTEGRATED ON SEMICONDUCTOR-ON-INSULATOR SUBSTRATE Public/Granted day:2021-11-18
Information query
IPC分类: