Invention Grant
- Patent Title: RF filters and resonators of crystalline III-N films
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Application No.: US16327720Application Date: 2016-09-30
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Publication No.: US11558032B2Publication Date: 2023-01-17
- Inventor: Sansaptak Dasgupta , Bruce A. Block , Paul B. Fischer , Han Wui Then , Marko Radosavljevic
- Applicant: INTEL CORPORATION
- Applicant Address: US CA Santa Clara
- Assignee: INTEL CORPORATION
- Current Assignee: INTEL CORPORATION
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- International Application: PCT/US2016/054699 WO 20160930
- International Announcement: WO2018/063299 WO 20180405
- Main IPC: H03H9/05
- IPC: H03H9/05 ; H03H9/13 ; H03H9/205 ; H03H3/02 ; H03H9/17 ; H03H9/02 ; H03H9/64 ; H03H9/58 ; H03H3/007

Abstract:
A bulk acoustic resonator architecture is fabricated by epitaxially forming a piezoelectric film on a top surface of post formed from an underlying substrate. In some cases, the acoustic resonator is fabricated to filter multiple frequencies. In some such cases, the resonator device includes two different resonator structures on a single substrate, each resonator structure configured to filter a desired frequency. Including two different acoustic resonators in a single RF acoustic resonator device enables that single device to filter two different frequencies in a relatively small footprint.
Public/Granted literature
- US20190214965A1 RF FILTERS AND RESONATORS OF CRYSTALLINE III-N FILMS Public/Granted day:2019-07-11
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