Invention Grant
- Patent Title: Deposition of semiconductor integration films
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Application No.: US16934730Application Date: 2020-07-21
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Publication No.: US11562904B2Publication Date: 2023-01-24
- Inventor: Lakmal Charidu Kalutarage , Mark Joseph Saly , Bhaskar Jyoti Bhuyan , Thomas Joseph Knisley , Kelvin Chan , Regina Germanie Freed , David Michael Thompson , Susmit Singha Roy , Madhur Sachan
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: H01L21/033
- IPC: H01L21/033 ; H01L21/02

Abstract:
Embodiments disclosed herein include methods of depositing a metal oxo photoresist using dry deposition processes. In an embodiment, the method comprises forming a first metal oxo film on the substrate with a first vapor phase process including a first metal precursor vapor and a first oxidant vapor, and forming a second metal oxo film over the first metal oxo film with a second vapor phase process including a second metal precursor vapor and a second oxidant vapor.
Public/Granted literature
- US20220028691A1 DEPOSITION OF SEMICONDUCTOR INTEGRATION FILMS Public/Granted day:2022-01-27
Information query
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