Invention Grant
- Patent Title: Transistors with separately-formed source and drain
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Application No.: US17243832Application Date: 2021-04-29
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Publication No.: US11563085B2Publication Date: 2023-01-24
- Inventor: Jiehui Shu , Baofu Zhu , Haiting Wang , Sipeng Gu
- Applicant: GLOBALFOUNDRIES U.S. Inc.
- Applicant Address: US CA Santa Clara
- Assignee: GLOBALFOUNDRIES U.S. Inc.
- Current Assignee: GLOBALFOUNDRIES U.S. Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Thompson Hine LLP
- Agent Francois Pagette
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L29/66 ; H01L27/092 ; H01L21/8238 ; H01L29/78

Abstract:
Structures for a field-effect transistor and methods of forming a structure for a field-effect transistor. A gate structure is arranged over a channel region of a semiconductor body. A first source/drain region is coupled to a first portion of the semiconductor body, and a second source/drain region is located in a second portion the semiconductor body. The first source/drain region includes an epitaxial semiconductor layer containing a first concentration of a dopant. The second source/drain region contains a second concentration of the dopant. The channel region is positioned in the semiconductor body between the first source/drain region and the second source/drain region.
Public/Granted literature
- US20210249508A1 TRANSISTORS WITH SEPARATELY-FORMED SOURCE AND DRAIN Public/Granted day:2021-08-12
Information query
IPC分类: