- 专利标题: Hammer refresh row address detector, and semiconductor memory device and memory module including the same
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申请号: US17504705申请日: 2021-10-19
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公开(公告)号: US11568917B1公开(公告)日: 2023-01-31
- 发明人: Hoon Shin , Yeonhong Park , Jaewook Lee , Eojin Lee , Woosuk Kwon , Jungho Ahn , Taejun Ham
- 申请人: SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 代理机构: Volentine, Whitt & Francos, PLLC
- 优先权: KR10-2021-0134781 20211012
- 主分类号: G11C11/4078
- IPC分类号: G11C11/4078
摘要:
A hammer refresh row address detector includes a control logic unit that receives a row address applied along with an active command, to increase a hit count stored in a corresponding entry when the row address is present in candidate aggressor row addresses stored in n entries. The control logic determines a candidate aggressor row address stored in an entry in which the hit count equals a threshold value to be a target aggressor row address. The control logic generates a victim row address adjacent to the target aggressor row address as a hammer refresh row address to accompany a hammer refresh command. The control logic increases the miss count value when the row address is not present in the candidate aggressor row addresses stored in the n entries and no hit count within the n entries is identical to the miss count value.
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