- 专利标题: Ion implanter and ion implantation method
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申请号: US16821349申请日: 2020-03-17
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公开(公告)号: US11569058B2公开(公告)日: 2023-01-31
- 发明人: Hiroshi Matsushita
- 申请人: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
- 申请人地址: JP Tokyo
- 专利权人: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
- 当前专利权人: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
- 当前专利权人地址: JP Tokyo
- 代理机构: Michael Best & Friedrich LLP
- 优先权: JPJP2019-051015 20190319
- 主分类号: H01J37/244
- IPC分类号: H01J37/244 ; H01J37/317 ; G01T3/00 ; H01J37/147
摘要:
An ion implanter includes: a plurality of devices which are disposed along a beamline along which an ion beam is transported; a plurality of neutron ray measuring instruments which are disposed at a plurality of positions in the vicinity of the beamline and measure neutron rays which are generated at a plurality of locations of the beamline due to collision of a high-energy ion beam; and a control device which monitors at least one of the plurality of devices, based on a measurement value in at least one of the plurality of neutron ray measuring instruments.
公开/授权文献
- US20200303161A1 ION IMPLANTER AND ION IMPLANTATION METHOD 公开/授权日:2020-09-24
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