- 专利标题: Semiconductor device including a groove within a resin insulating part positioned between and covering parts of a first electrode and a second electrode
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申请号: US17058283申请日: 2018-08-08
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公开(公告)号: US11569141B2公开(公告)日: 2023-01-31
- 发明人: Daisuke Oya , Yukimasa Hayashida , Tetsuo Motomiya
- 申请人: Mitsubishi Electric Corporation
- 申请人地址: JP Tokyo
- 专利权人: Mitsubishi Electric Corporation
- 当前专利权人: Mitsubishi Electric Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Studebaker & Brackett PC
- 国际申请: PCT/JP2018/029708 WO 20180808
- 国际公布: WO2020/031283 WO 20200213
- 主分类号: H01L23/08
- IPC分类号: H01L23/08 ; H01L29/417 ; H01L23/057
摘要:
A semiconductor device includes a first electrode; a second electrode; a resin case surrounding the first electrode and the second electrode; and a resin insulating part made of a material the same as a material of the resin case and covering part of the first electrode and part of the second electrode inside the resin case. The resin insulating part contacts an inner wall of the resin case or is separated from the inner wall of the resin case. A move positioned between the first electrode and the second electrode is formed at the resin insulating part, and thus a space in which the resin insulating part does not exist or a material different from the resin insulating part is provided between the first electrode and the second electrode.
公开/授权文献
- US20210217675A1 SEMICONDUCTOR DEVICE 公开/授权日:2021-07-15
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