Invention Grant
- Patent Title: Semiconductor memory device
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Application No.: US17200701Application Date: 2021-03-12
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Publication No.: US11574682B2Publication Date: 2023-02-07
- Inventor: Xu Li
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz & Volek PC
- Priority: JPJP2020-123692 20200720
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/04 ; H01L27/11582 ; G11C16/26 ; G11C16/08

Abstract:
According to one embodiment, a semiconductor memory device includes a first memory string including a first memory cell transistor, a second memory cell transistor, and a first select element that connects the first memory cell transistor and the second memory cell transistor in series, a second memory string including a third memory cell transistor, a fourth memory cell transistor, and a second select element that connects the third memory cell transistor and the fourth memory cell transistor in series, and a control circuit. The control circuit is configured to set the second select element to an off state while setting the first select element to an on state when reading data of the first memory string.
Public/Granted literature
- US20220020432A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2022-01-20
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