Invention Grant
- Patent Title: Asymmetrical semiconductor nanowire field-effect transistor
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Application No.: US15942252Application Date: 2018-03-30
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Publication No.: US11575005B2Publication Date: 2023-02-07
- Inventor: Seung Hoon Sung , Dipanjan Basu , Ashish Agrawal , Benjamin Chu-Kung , Siddharth Chouksey , Cory C. Bomberger , Tahir Ghani , Anand S. Murthy , Jack T. Kavalieros
- Applicant: INTEL CORPORATION
- Applicant Address: US CA Santa Clara
- Assignee: INTEL CORPORATION
- Current Assignee: INTEL CORPORATION
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/423 ; H01L29/10 ; H01L29/66 ; H01L29/78 ; H01L29/16
Abstract:
An integrated circuit structure includes: a semiconductor nanowire extending in a length direction and including a body portion; a gate dielectric surrounding the body portion; a gate electrode insulated from the body portion by the gate dielectric; a semiconductor source portion adjacent to a first side of the body portion; and a semiconductor drain portion adjacent to a second side of the body portion opposite the first side, the narrowest dimension of the second side of the body portion being smaller than the narrowest dimension of the first side. In an embodiment, the nanowire has a conical tapering. In an embodiment, the gate electrode extends along the body portion in the length direction to the source portion, but not to the drain portion. In an embodiment, the drain portion at the second side of the body portion has a lower dopant concentration than the source portion at the first side.
Public/Granted literature
- US20190305085A1 ASYMMETRICAL SEMICONDUCTOR NANOWIRE FIELD-EFFECT TRANSISTOR Public/Granted day:2019-10-03
Information query
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