Invention Grant
- Patent Title: Superlattice structure including two-dimensional material and device including the superlattice structure
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Application No.: US17515713Application Date: 2021-11-01
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Publication No.: US11575011B2Publication Date: 2023-02-07
- Inventor: Minhyun Lee , Jiwoong Park , Saien Xie , Jinseong Heo , Hyeonjin Shin
- Applicant: Samsung Electronics Co., Ltd. , THE UNIVERSITY OF CHICAGO , Center for Technology Licensing at Cornell University
- Applicant Address: KR Suwon-si; US IL Chicago; US NY Ithaca
- Assignee: Samsung Electronics Co., Ltd.,THE UNIVERSITY OF CHICAGO,Center for Technology Licensing at Cornell University
- Current Assignee: Samsung Electronics Co., Ltd.,THE UNIVERSITY OF CHICAGO,Center for Technology Licensing at Cornell University
- Current Assignee Address: KR Suwon-si; US IL Chicago; US NY Ithaca
- Agency: Harness, Dickey & Pierce, P.L.C.
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L29/10

Abstract:
Provided are a superlattice structure including a two-dimensional material and a device including the superlattice structure. The superlattice structure may include at least two different two-dimensional (2D) materials bonded to each other in a lateral direction, and an interfacial region of the at least two 2D materials may be strained. The superlattice structure may have a bandgap adjusted by the interfacial region that is strained. The at least two 2D materials may include first and second 2D materials. The first 2D material may have a first bandgap in an intrinsic state thereof. The second 2D material may have a second bandgap in an intrinsic state thereof. An interfacial region of the first and second 2D materials and an adjacent region may have a third bandgap between the first bandgap and the second bandgap.
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