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公开(公告)号:US11575011B2
公开(公告)日:2023-02-07
申请号:US17515713
申请日:2021-11-01
申请人: Samsung Electronics Co., Ltd. , THE UNIVERSITY OF CHICAGO , Center for Technology Licensing at Cornell University
发明人: Minhyun Lee , Jiwoong Park , Saien Xie , Jinseong Heo , Hyeonjin Shin
摘要: Provided are a superlattice structure including a two-dimensional material and a device including the superlattice structure. The superlattice structure may include at least two different two-dimensional (2D) materials bonded to each other in a lateral direction, and an interfacial region of the at least two 2D materials may be strained. The superlattice structure may have a bandgap adjusted by the interfacial region that is strained. The at least two 2D materials may include first and second 2D materials. The first 2D material may have a first bandgap in an intrinsic state thereof. The second 2D material may have a second bandgap in an intrinsic state thereof. An interfacial region of the first and second 2D materials and an adjacent region may have a third bandgap between the first bandgap and the second bandgap.
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公开(公告)号:US11189699B2
公开(公告)日:2021-11-30
申请号:US16428006
申请日:2019-05-31
申请人: Samsung Electronics Co., Ltd. , THE UNIVERSITY OF CHICAGO , Center for Technology Licensing at Cornell University
发明人: Minhyun Lee , Jiwoong Park , Saien Xie , Jinseong Heo , Hyeonjin Shin
摘要: Provided are a superlattice structure including a two-dimensional material and a device including the superlattice structure. The superlattice structure may include at least two different two-dimensional (2D) materials bonded to each other in a lateral direction, and an interfacial region of the at least two 2D materials may be strained. The superlattice structure may have a bandgap adjusted by the interfacial region that is strained. The at least two 2D materials may include first and second 2D materials. The first 2D material may have a first bandgap in an intrinsic state thereof. The second 2D material may have a second bandgap in an intrinsic state thereof. An interfacial region of the first and second 2D materials and an adjacent region may have a third bandgap between the first bandgap and the second bandgap.
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公开(公告)号:US12034049B2
公开(公告)日:2024-07-09
申请号:US18052017
申请日:2022-11-02
申请人: Samsung Electronics Co., Ltd. , THE UNIVERSITY OF CHICAGO , Center for Technology Licensing at Cornell University
发明人: Minhyun Lee , Jiwoong Park , Saien Xie , Jinseong Heo , Hyeonjin Shin
CPC分类号: H01L29/158 , H01L29/1054
摘要: Provided are a superlattice structure including a two-dimensional material and a device including the superlattice structure. The superlattice structure may include at least two different two-dimensional (2D) materials bonded to each other in a lateral direction, and an interfacial region of the at least two 2D materials may be strained. The superlattice structure may have a bandgap adjusted by the interfacial region that is strained. The at least two 2D materials may include first and second 2D materials. The first 2D material may have a first bandgap in an intrinsic state thereof. The second 2D material may have a second bandgap in an intrinsic state thereof. An interfacial region of the first and second 2D materials and an adjacent region may have a third bandgap between the first bandgap and the second bandgap.
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公开(公告)号:US20230392292A1
公开(公告)日:2023-12-07
申请号:US18071339
申请日:2022-11-29
发明人: Jiwoong Park , Andrew Mannix , Andrew Ye
摘要: Multi-layer materials and related systems and methods are generally described.
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公开(公告)号:US20230049782A1
公开(公告)日:2023-02-16
申请号:US17884115
申请日:2022-08-09
发明人: Jiwoong Park , Shi En Kim , Fauzia Mujid , Joonki Suh
IPC分类号: H01L23/373
摘要: Articles, devices, and methods including anisotropic van der Waals thermal conductors are described.
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公开(公告)号:US20220388026A1
公开(公告)日:2022-12-08
申请号:US17767125
申请日:2020-10-06
发明人: Jiwoong Park , Yu Zhong , Baorui Cheng
摘要: Disclosed herein are inventive methods of making thin films, inventive thin films, and inventive articles and systems comprising thin films. Certain embodiments are related to methods of making thin films in which reagents are arranged within a first phase and a second phase such that at least one reagent reacts to form a thin film proximate to the interface between the first phase and the second phase. Thin films (including two-dimensional materials) disclosed herein can have one or more of a variety of beneficial properties including large lateral dimension(s), lateral continuity, high mechanical strength, consistent spatial composition, and/or consistent thickness. In accordance with certain embodiments, thin films disclosed herein can be combined to form a variety of inventive multi-layer articles, including multi-layer articles comprising a combination of thin films having different compositions that interact with each other via van der Waals forces.
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公开(公告)号:US12030081B2
公开(公告)日:2024-07-09
申请号:US17767125
申请日:2020-10-06
发明人: Jiwoong Park , Yu Zhong , Baorui Cheng
摘要: Disclosed herein are inventive methods of making thin films, inventive thin films, and inventive articles and systems comprising thin films. Certain embodiments are related to methods of making thin films in which reagents are arranged within a first phase and a second phase such that at least one reagent reacts to form a thin film proximate to the interface between the first phase and the second phase. Thin films (including two-dimensional materials) disclosed herein can have one or more of a variety of beneficial properties including large lateral dimension(s), lateral continuity, high mechanical strength, consistent spatial composition, and/or consistent thickness. In accordance with certain embodiments, thin films disclosed herein can be combined to form a variety of inventive multi-layer articles, including multi-layer articles comprising a combination of thin films having different compositions that interact with each other via van der Waals forces.
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公开(公告)号:US11223929B2
公开(公告)日:2022-01-11
申请号:US16599967
申请日:2019-10-11
发明人: Jinho Kim , Geunyoung Yu , Deoknam Kim , Jiwoong Park , Sangu Shim , Saehun Oh , Sukun Yoon
摘要: Provided are an electronic device and method of determining a peer-to-peer (P2P) operating channel. The electronic device includes a communication interface; and a processor configured to acquire access point (AP) connection information of the electronic device about a wireless connection to an AP and BT connection information of the electronic device about a connection to a Bluetooth device, receive, from a peer device attempting to establish a P2P connection to the electronic device, AP connection information of the peer device about a wireless connection to an AP, determine a P2P operating channel between the electronic device and the peer device based on the AP connection information and the BT connection information of the electronic device and the AP connection information of the peer device, and establish a P2P connection between the electronic device and the peer device according to the determined P2P operating channel.
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公开(公告)号:US11871178B2
公开(公告)日:2024-01-09
申请号:US17649306
申请日:2022-01-28
发明人: Jiwoong Park , Hyeonjoong Kim , Sungeun Park
CPC分类号: H04R1/2811 , A61B5/02438 , G04G17/04 , G04G21/025 , G06F3/0412 , H04R1/028 , H04R1/04 , G06F1/181 , G06F2203/04102 , H04R2400/11 , H04R2499/11 , H04R2499/15
摘要: An electronic device comprises a housing including a window member facing a first direction, a rear housing facing a second direction that is opposite to the first direction, and a side member encompassing the space between the window member and the rear housing. The electronic device also includes a display that is visible through at least a part of the window member and a speaker assembly disposed in the space. The speaker assemble includes a speaker diaphragm. The side member includes a resonance space including a shape a recessed form in a third direction that is substantially perpendicular to the first direction or the second direction. A through hole is formed in the third direction in a part of the resonance space that is closer to the rear housing than to the window member. A part of the resonance space can be disposed so as to overlap the speaker diaphragm.
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