Invention Grant
- Patent Title: Integrated high efficiency gate on gate cooling
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Application No.: US17344259Application Date: 2021-06-10
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Publication No.: US11581242B2Publication Date: 2023-02-14
- Inventor: Daniel Chanemougame , Lars Liebmann , Jeffrey Smith , Paul Gutwin
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: H01L23/473
- IPC: H01L23/473 ; H01L25/00 ; H01L25/065 ; H01L23/00 ; H01L25/18

Abstract:
A microfabrication device is provided. The microfabrication device includes a combined substrate including a first substrate connected to a second substrate, the first substrate having first devices and the second substrate having second devices; fluidic passages formed at a connection point between the first substrate and the second substrate, the connection point including a wiring structure that electrically connects first devices to second devices and physically connects the first substrate to the second substrate; dielectric fluid added to the fluidic passages; and a circulating mechanism configured to circulate the dielectric fluid through the fluidic passages to transfer heat.
Public/Granted literature
- US20220223497A1 INTEGRATED HIGH EFFICIENCY GATE ON GATE COOLING Public/Granted day:2022-07-14
Information query
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