Invention Grant
- Patent Title: Electronic devices comprising overlay marks, memory devices comprising overlay marks, and related methods
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Application No.: US16546759Application Date: 2019-08-21
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Publication No.: US11581264B2Publication Date: 2023-02-14
- Inventor: Rohit Kothari , Harsh Narendrakumar Jain , John D. Hopkins , Xiaosong Zhang
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L23/544
- IPC: H01L23/544
Abstract:
An electronic device comprising at least one high aspect ratio feature in a base stack of materials, overlay marks in or on only an upper portion of the base stack of materials, and an additional stack of materials adjacent the base stack of materials, the additional stack of materials comprising the at least one high aspect ratio feature. Additional electronic devices and memory devices are disclosed, as are methods of forming high aspect ratio features in an electronic device.
Public/Granted literature
Information query
IPC分类:
