Photoconductive semiconductor switch laterally fabricated alongside GaN on Si field effect transistors

Invention Grant

US11581448B2 Photoconductive semiconductor switch laterally fabricated alongside GaN on Si field effect transistors 有权

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Patent Title: Photoconductive semiconductor switch laterally fabricated alongside GaN on Si field effect transistors
Application No.: US17220660

Application Date: 2021-04-01
Publication No.: US11581448B2

Publication Date: 2023-02-14
Inventor: Matthew DeJarld , Jeffrey R. LaRoche , Clay T. Long , Lovelace Soirez
Applicant: Raytheon Company
Applicant Address: US MA Waltham
Assignee: Raytheon Company
Current Assignee: Raytheon Company
Current Assignee Address: US MA Waltham
Agency: Bachman & LaPointe, P.C.
Main IPC: H01L31/103
IPC: H01L31/103 ; H01L31/02 ; H01L31/0304 ; H01L31/09

Photoconductive semiconductor switch laterally fabricated alongside GaN on Si field effect transistors

Abstract:

An integrated circuit structure comprising a substrate having an upper surface; a gallium nitride layer disposed on the upper surface of the substrate; and a photoconductive semiconductor switch laterally disposed alongside a transistor on the gallium nitride layer integrated into the integrated circuit structure wherein a regrown gallium nitride material is disposed on the photoconductive semiconductor switch and operatively coupled with the wafer.

Public/Granted literature

US20220320360A1 PHOTOCONDUCTIVE SEMICONDUCTOR SWITCH LATERALLY FABRICATED ALONGSIDE GaN ON Si FIELD-EFFECT TRANSISTORS Public/Granted day:2022-10-06

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L31/00	对红外辐射、光、较短波长的电磁辐射，或微粒辐射敏感的，并且专门适用于把这样的辐射能转换为电能的，或者专门适用于通过这样的辐射进行电能控制的半导体器件；专门适用于制造或处理这些半导体器件或其部件的方法或设备；其零部件（H01L51/42优先；由形成在一共用衬底内或其上的多个固态组件，而不是辐射敏感元件与一个或多个电光源的结合所组成的器件入H01L27/00）
H01L31/08	.其中的辐射控制通过该器件的电流的，例如光敏电阻器
H01L31/10	..特点在于至少有一个电位跃变势垒或表面势垒的，例如光敏晶体管
H01L31/101	...对红外、可见或紫外辐射敏感的器件
H01L31/102	....仅以一个势垒或面垒为特征的
H01L31/103	.....为PN单质结型势垒的