公开(公告)号：US11581448B2

公开(公告)日：2023-02-14

申请号：US17220660

申请日：2021-04-01

Applicant: Raytheon Company

Inventor： Matthew DeJarld ,  Jeffrey R. LaRoche ,  Clay T. Long ,  Lovelace Soirez

IPC: H01L31/103 ,  H01L31/02 ,  H01L31/0304 ,  H01L31/09

Abstract: An integrated circuit structure comprising a substrate having an upper surface; a gallium nitride layer disposed on the upper surface of the substrate; and a photoconductive semiconductor switch laterally disposed alongside a transistor on the gallium nitride layer integrated into the integrated circuit structure wherein a regrown gallium nitride material is disposed on the photoconductive semiconductor switch and operatively coupled with the wafer.

公开(公告)号：US20230056601A1

公开(公告)日：2023-02-23

申请号：US17406541

申请日：2021-08-19

Applicant: Raytheon Company

Inventor： Matthew DeJarld ,  Jeffrey R. LaRoche ,  Susan C. Trulli

IPC: H01L23/552 ,  H01L27/144

Abstract: An integrated circuit structure including a substrate having an upper surface; a gallium nitride layer disposed on the upper surface of the substrate; and a photoconductive semiconductor switch laterally disposed alongside a transistor on the gallium nitride layer integrated into the integrated circuit structure; an EMF shield enclosing the substrate, the gallium nitride layer and the photoconductive semiconductor switch laterally disposed alongside the transistor on the gallium nitride layer integrated into the integrated circuit structure; and a signal line electronically coupled with the photoconductive semiconductor switch, the signal line penetrating the EMF shield.

公开(公告)号：US20220320152A1

公开(公告)日：2022-10-06

申请号：US17220656

申请日：2021-04-01

Applicant: Raytheon Company

Inventor： Matthew DeJarld ,  Jeffrey R. LaRoche ,  Clay T. Long ,  Lovelace Soirez

IPC: H01L27/144

Abstract: An integrated circuit structure comprising a substrate having an upper surface; a gallium nitride layer disposed on the upper surface of the substrate; and a photoconductive semiconductor switch laterally disposed alongside a transistor on the gallium nitride layer integrated into the integrated circuit structure.

公开(公告)号：US11710708B2

公开(公告)日：2023-07-25

申请号：US17406541

申请日：2021-08-19

Applicant: Raytheon Company

Inventor： Matthew DeJarld ,  Jeffrey R. LaRoche ,  Susan C. Trulli

IPC: H01L23/552 ,  H01L27/144

CPC classification number: H01L23/552 ,  H01L27/144

Abstract: An integrated circuit structure including a substrate having an upper surface; a gallium nitride layer disposed on the upper surface of the substrate; and a photoconductive semiconductor switch laterally disposed alongside a transistor on the gallium nitride layer integrated into the integrated circuit structure; an EMF shield enclosing the substrate, the gallium nitride layer and the photoconductive semiconductor switch laterally disposed alongside the transistor on the gallium nitride layer integrated into the integrated circuit structure; and a signal line electronically coupled with the photoconductive semiconductor switch, the signal line penetrating the EMF shield.

公开(公告)号：US20220320360A1

公开(公告)日：2022-10-06

申请号：US17220660

申请日：2021-04-01

Applicant: Raytheon Company

Inventor： Matthew DeJarld ,  Jeffrey R. LaRoche ,  Clay T. Long ,  Lovelace Soirez

IPC: H01L31/103 ,  H01L31/02

Abstract: An integrated circuit structure comprising a substrate having an upper surface; a gallium nitride layer disposed on the upper surface of the substrate; and a photoconductive semiconductor switch laterally disposed alongside a transistor on the gallium nitride layer integrated into the integrated circuit structure wherein a regrown gallium nitride material is disposed on the photoconductive semiconductor switch and operatively coupled with the wafer.