Invention Grant
- Patent Title: Porous substrate structure and manufacturing method thereof
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Application No.: US17120265Application Date: 2020-12-14
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Publication No.: US11583810B2Publication Date: 2023-02-21
- Inventor: Chun-Ju Huang , Yen-Hsun Chi , Bing-Hung Chang
- Applicant: Industrial Technology Research Institute
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Main IPC: B01D53/22
- IPC: B01D53/22 ; B01D69/10 ; B01D71/02 ; B01D69/02 ; B01D69/04

Abstract:
Provided are a porous substrate structure and a manufacturing method thereof. The porous substrate structure includes a substrate, an anodic aluminum oxide layer and a double metal oxide layer. The substrate has a plurality of pores. The anodic aluminum oxide layer is disposed on the substrate. The double metal oxide layer is disposed on the anodic aluminum oxide layer.
Public/Granted literature
- US20220184561A1 POROUS SUBSTRATE STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2022-06-16
Information query
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