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公开(公告)号：US11583810B2
公开(公告)日：2023-02-21
申请号：US17120265
申请日：2020-12-14
Applicant: Industrial Technology Research Institute
Inventor： Chun-Ju Huang , Yen-Hsun Chi , Bing-Hung Chang
Abstract: Provided are a porous substrate structure and a manufacturing method thereof. The porous substrate structure includes a substrate, an anodic aluminum oxide layer and a double metal oxide layer. The substrate has a plurality of pores. The anodic aluminum oxide layer is disposed on the substrate. The double metal oxide layer is disposed on the anodic aluminum oxide layer.
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公开(公告)号：US10668429B2
公开(公告)日：2020-06-02
申请号：US16008763
申请日：2018-06-14
Applicant: Industrial Technology Research Institute
Inventor： Yen-Hsun Chi , Chun-Ju Huang , Yu-Li Lin
Abstract: A method for filtering gas includes providing a gas filtration structure, and the gas filtration structure includes a porous support and a first gas filtration film pair on the porous support, wherein the first gas filtration film pair includes a first hydrogen permeation layer and a first calcinated layered double hydroxide (c-LDH) layer, and the first hydrogen permeation layer is disposed between the porous support and the first c-LDH layer. The method also provides a hydrogen-containing mixture gas over the first gas filtration film pair, and collects hydrogen under the porous support.
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公开(公告)号：US20220184561A1
公开(公告)日：2022-06-16
申请号：US17120265
申请日：2020-12-14
Applicant: Industrial Technology Research Institute
Inventor： Chun-Ju Huang , Yen-Hsun Chi , Bing-Hung Chang
Abstract: Provided are a porous substrate structure and a manufacturing method thereof. The porous substrate structure includes a substrate, an anodic aluminum oxide layer and a double metal oxide layer. The substrate has a plurality of pores. The anodic aluminum oxide layer is disposed on the substrate. The double metal oxide layer is disposed on the anodic aluminum oxide layer.
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