Invention Grant
- Patent Title: Methods for on-die memory termination and memory devices and systems employing the same
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Application No.: US17315532Application Date: 2021-05-10
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Publication No.: US11586386B2Publication Date: 2023-02-21
- Inventor: Eric J. Stave , Thomas H. Kinsley , Matthew A. Prather
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G11C7/10 ; G11C11/4093 ; G06F13/40
Abstract:
Methods, systems, and apparatuses related to memory operation with on-die termination (ODT) are provided. A memory device may be configured to provide ODT at a first portion (e.g., rank) during communications at a second portion (e.g., rank). For example, a memory device may receive a first command instructing a first portion to perform a first communication. The device may transmit, from the first portion, a signal instructing a second portion to enter an ODT mode. The device may perform, with the first portion, the first communication with a host while the second portion is in the ODT mode. The signal may be provided at an ODT I/O terminal of the first portion coupled to an ODT I/O terminal of the second portion.
Public/Granted literature
- US20210263685A1 METHODS FOR ON-DIE MEMORY TERMINATION AND MEMORY DEVICES AND SYSTEMS EMPLOYING THE SAME Public/Granted day:2021-08-26
Information query
