Invention Grant
- Patent Title: Substrate structure including embedded semiconductor device
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Application No.: US16813369Application Date: 2020-03-09
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Publication No.: US11587881B2Publication Date: 2023-02-21
- Inventor: Chien-Fan Chen , Yu-Ju Liao , Chu-Jie Yang , Sheng-Hung Shih
- Applicant: Advanced Semiconductor Engineering, Inc.
- Applicant Address: TW Kaohsiung
- Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee Address: TW Kaohsiung
- Agency: Foley & Lardner LLP
- Main IPC: H01L23/538
- IPC: H01L23/538 ; H01L23/498 ; H01L21/48 ; H01L25/065
Abstract:
A substrate structure is disclosed. The substrate structure includes a carrier, a dielectric layer on the carrier, a patterned organic core layer in the dielectric layer, and a conductive via. The patterned organic core layer defines a passage extending in the dielectric layer towards the carrier. The conductive via extends through the passage towards the carrier without contacting the patterned organic core layer.
Public/Granted literature
- US20210280521A1 SUBSTRATE STRUCTURE INCLUDING EMBEDDED SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2021-09-09
Information query
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