- 专利标题： Method of making a semiconductor structure
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申请号： US17207152申请日： 2021-03-19
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公开(公告)号： US11594449B2公开(公告)日： 2023-02-28
- 发明人: Chih-Ming Lee , Hung-Che Liao , Kun-Tsang Chuang , Wei-Chung Lu
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Hauptman Ham, LLP
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L23/522 ; H01L23/532 ; H01L21/02
摘要：
A method of making a semiconductor structure includes depositing a first passivation material between adjacent conductive elements on a substrate, wherein a bottommost surface of the first passivation material is coplanar with a bottommost surface of each of the adjacent conductive elements. The method further includes depositing a second passivation material on the substrate, wherein the second passivation material contacts a sidewall of each of the adjacent conductive elements and a sidewall of the first passivation material, a bottommost surface of the second passivation material is coplanar with the bottommost surface of each of the adjacent conductive elements, and the second passivation material is different from the first passivation material.
公开/授权文献
- US20210210381A1 METHOD OF MAKING A SEMICONDUCTOR STRUCTURE 公开/授权日：2021-07-08
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