- 专利标题： Semiconductor chip including through electrode, and semiconductor package including the same
-
申请号： US17191287申请日： 2021-03-03
-
公开(公告)号： US11594471B2公开(公告)日： 2023-02-28
- 发明人: Ho Young Son , Sung Kyu Kim , Mi Seon Lee
- 申请人： SK hynix Inc.
- 申请人地址： KR Icheon-si Gyeonggi-do
- 专利权人： SK hynix Inc.
- 当前专利权人： SK hynix Inc.
- 当前专利权人地址： KR Icheon-si Gyeonggi-do
- 代理机构： William Park & Associates Ltd.
- 优先权： KR10-2020-0159887 20201125
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L25/065 ; H01L23/00
摘要：
A semiconductor chip may include: a body portion with a front surface and a rear surface; a pair of through electrodes penetrating the body portion; an insulating layer disposed over the rear surface of the body portion and the pair of through electrodes; and a rear connection electrode disposed over the insulating layer and connected simultaneously with the pair of through electrodes, wherein a distance between the pair of through electrodes is greater than twice a thickness of the insulating layer.
公开/授权文献
信息查询
IPC分类:
