公开(公告)号：US11823982B2

公开(公告)日：2023-11-21

申请号：US18103346

申请日：2023-01-30

申请人： SK hynix Inc.

发明人： Ho Young Son ,  Sung Kyu Kim ,  Mi Seon Lee

IPC分类号： H01L23/48 ,  H01L25/065 ,  H01L23/00

CPC分类号： H01L23/481 ,  H01L24/16 ,  H01L25/0657 ,  H01L2224/16146 ,  H01L2225/06513

摘要： A semiconductor chip may include: a body portion with a front surface and a rear surface; a pair of through electrodes penetrating the body portion; an insulating layer disposed over the rear surface of the body portion and the pair of through electrodes; and a rear connection electrode disposed over the insulating layer and connected simultaneously with the pair of through electrodes, wherein a distance between the pair of through electrodes is greater than twice a thickness of the insulating layer.

公开(公告)号：US12046573B2

公开(公告)日：2024-07-23

申请号：US17697708

申请日：2022-03-17

申请人： SK hynix Inc.

发明人： Jin Woong Kim ,  Mi Seon Lee

IPC分类号： H01L23/00 ,  H01L25/00 ,  H01L25/065 ,  H01L25/18

CPC分类号： H01L24/30 ,  H01L24/04 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L25/0652 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05025 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05186 ,  H01L2224/05573 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/1146 ,  H01L2224/13014 ,  H01L2224/13025 ,  H01L2224/13147 ,  H01L2224/14134 ,  H01L2224/14181 ,  H01L2224/16146 ,  H01L2224/16238 ,  H01L2224/17181 ,  H01L2224/2746 ,  H01L2224/29012 ,  H01L2224/29035 ,  H01L2224/29147 ,  H01L2224/29186 ,  H01L2224/3003 ,  H01L2224/30051 ,  H01L2224/3015 ,  H01L2224/30181 ,  H01L2224/30505 ,  H01L2224/30517 ,  H01L2224/30519 ,  H01L2224/32145 ,  H01L2224/73104 ,  H01L2224/73153 ,  H01L2224/81201 ,  H01L2224/83048 ,  H01L2224/83201 ,  H01L2924/04941 ,  H01L2924/05042

摘要： A semiconductor die stack includes a base die and core dies stacked over the base die. Each of the base die and the core dies include a semiconductor substrate, a front side passivation layer formed over a front side of the semiconductor substrate, a back side passivation layer over a back side of the semiconductor substrate, a through-via vertically penetrating the semiconductor substrate and the front side passivation layer, and a bump, a support pattern, and a bonding insulating layer formed over the front side passivation layer. Top surfaces of the bump, the support pattern, and the bonding insulating layer are co-planar. The bump is vertically aligned with the through-via. The support pattern is spaced apart from the through-via and the bump. The support pattern includes a plurality of first bars that extend in parallel with each other in a first direction and a plurality of second bars that extend in parallel with each other in a second direction.

公开(公告)号：US11594471B2

公开(公告)日：2023-02-28

申请号：US17191287

申请日：2021-03-03

申请人： SK hynix Inc.

发明人： Ho Young Son ,  Sung Kyu Kim ,  Mi Seon Lee

IPC分类号： H01L23/48 ,  H01L25/065 ,  H01L23/00

摘要： A semiconductor chip may include: a body portion with a front surface and a rear surface; a pair of through electrodes penetrating the body portion; an insulating layer disposed over the rear surface of the body portion and the pair of through electrodes; and a rear connection electrode disposed over the insulating layer and connected simultaneously with the pair of through electrodes, wherein a distance between the pair of through electrodes is greater than twice a thickness of the insulating layer.