Invention Grant
- Patent Title: Multi-die interconnect
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Application No.: US17245903Application Date: 2021-04-30
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Publication No.: US11594491B2Publication Date: 2023-02-28
- Inventor: Li-Sheng Weng , Hong Bok We
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L23/538
- IPC: H01L23/538 ; H01L23/13 ; H01L21/56 ; H01L21/48 ; H01L23/31

Abstract:
Disclosed is an apparatus including a molded multi-die high density interconnect including: a bridge die having a first plurality of interconnects and second plurality of interconnects. The apparatus also includes a first die having a first plurality of contacts and a second plurality of contacts, where the second plurality of contacts is coupled to the first plurality of interconnects of the bridge die. The apparatus also includes a second die having a first plurality of contacts and a second plurality of contacts, where the second plurality of contacts is coupled to the second plurality of interconnects of the bridge die. The coupled second plurality of contacts and interconnects have a smaller height than the first plurality of contacts of the first die and second die.
Public/Granted literature
- US20220352075A1 MULTI-DIE INTERCONNECT Public/Granted day:2022-11-03
Information query
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