Invention Grant
- Patent Title: Method of manufacturing a bonded substrate stack
-
Application No.: US17518000Application Date: 2021-11-03
-
Publication No.: US11594515B2Publication Date: 2023-02-28
- Inventor: Alfred Sigl , Alexander Frey
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: EP20205462 20201103
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/18 ; H01L25/065

Abstract:
A method of manufacturing a bonded substrate stack includes: providing a first substrate having a first hybrid interface layer, the first hybrid interface layer including a first insulator and a first metal; and providing a second substrate having a second hybrid interface layer, the second hybrid interface layer including a second insulator and a second metal. The hybrid interface layers are surface-activated by particle bombardment which is configured to remove atoms of the first hybrid interface layer and atoms of the second hybrid interface layer to generate dangling bonds on the hybrid interface layers. The surface-activated hybrid interface layers are brought into contact, such that the dangling bonds of the first hybrid interface layer and the dangling bonds of the second hybrid interface layer bond together to form first insulator to second insulator bonds and first metal to second metal bonds.
Public/Granted literature
- US20220139870A1 METHOD OF MANUFACTURING A BONDED SUBSTRATE STACK Public/Granted day:2022-05-05
Information query
IPC分类: