公开(公告)号：US11948912B2

公开(公告)日：2024-04-02

申请号：US18104456

申请日：2023-02-01

Applicant: Infineon Technologies AG

Inventor： Alfred Sigl ,  Alexander Frey

IPC: H01L23/00 ,  H01L21/18 ,  H01L25/065

CPC classification number: H01L24/94 ,  H01L21/187 ,  H01L25/0652

Abstract: A method of manufacturing a bonded substrate stack includes: providing a first substrate having a first hybrid interface layer, the first hybrid interface layer including a first insulator and a first metal; and providing a second substrate having a second hybrid interface layer, the second hybrid interface layer including a second insulator and a second metal. The hybrid interface layers are surface-activated to generate dangling bonds on the hybrid interface layers. The surface-activated hybrid interface layers are brought into contact, such that the dangling bonds of the first hybrid interface layer and the dangling bonds of the second hybrid interface layer bond together to form first insulator to second insulator bonds and first metal to second metal bonds.

公开(公告)号：US20230178512A1

公开(公告)日：2023-06-08

申请号：US18104456

申请日：2023-02-01

Applicant: Infineon Technologies AG

Inventor： Alfred Sigl ,  Alexander Frey

IPC: H01L23/00 ,  H01L21/18 ,  H01L25/065

CPC classification number: H01L24/94 ,  H01L21/187 ,  H01L25/0652

Abstract: A method of manufacturing a bonded substrate stack includes: providing a first substrate having a first hybrid interface layer, the first hybrid interface layer including a first insulator and a first metal; and providing a second substrate having a second hybrid interface layer, the second hybrid interface layer including a second insulator and a second metal. The hybrid interface layers are surface-activated to generate dangling bonds on the hybrid interface layers. The surface-activated hybrid interface layers are brought into contact, such that the dangling bonds of the first hybrid interface layer and the dangling bonds of the second hybrid interface layer bond together to form first insulator to second insulator bonds and first metal to second metal bonds.

公开(公告)号：US11594515B2

公开(公告)日：2023-02-28

申请号：US17518000

申请日：2021-11-03

Applicant: Infineon Technologies AG

Inventor： Alfred Sigl ,  Alexander Frey

IPC: H01L23/00 ,  H01L21/18 ,  H01L25/065

Abstract: A method of manufacturing a bonded substrate stack includes: providing a first substrate having a first hybrid interface layer, the first hybrid interface layer including a first insulator and a first metal; and providing a second substrate having a second hybrid interface layer, the second hybrid interface layer including a second insulator and a second metal. The hybrid interface layers are surface-activated by particle bombardment which is configured to remove atoms of the first hybrid interface layer and atoms of the second hybrid interface layer to generate dangling bonds on the hybrid interface layers. The surface-activated hybrid interface layers are brought into contact, such that the dangling bonds of the first hybrid interface layer and the dangling bonds of the second hybrid interface layer bond together to form first insulator to second insulator bonds and first metal to second metal bonds.

公开(公告)号：US20220139870A1

公开(公告)日：2022-05-05

申请号：US17518000

申请日：2021-11-03

Applicant: Infineon Technologies AG

Inventor： Alfred Sigl ,  Alexander Frey

IPC: H01L23/00 ,  H01L25/065 ,  H01L21/18

Abstract: A method of manufacturing a bonded substrate stack includes: providing a first substrate having a first hybrid interface layer, the first hybrid interface layer including a first insulator and a first metal; and providing a second substrate having a second hybrid interface layer, the second hybrid interface layer including a second insulator and a second metal. The hybrid interface layers are surface-activated by particle bombardment which is configured to remove atoms of the first hybrid interface layer and atoms of the second hybrid interface layer to generate dangling bonds on the hybrid interface layers. The surface-activated hybrid interface layers are brought into contact, such that the dangling bonds of the first hybrid interface layer and the dangling bonds of the second hybrid interface layer bond together to form first insulator to second insulator bonds and first metal to second metal bonds.

公开(公告)号：US20240017986A1

公开(公告)日：2024-01-18

申请号：US18352444

申请日：2023-07-14

Applicant: Infineon Technologies AG

Inventor： Stefan Barzen ,  Alexander Frey ,  Matthias Friedrich Herrmann ,  Jun Cheng Ooi ,  Hans-Jörg Timme

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/007 ,  B81B3/001 ,  B81C1/00658 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/04 ,  B81C2201/0178 ,  B81C2201/0133

Abstract: A MEMS device comprises a first membrane structure having a reinforcement region formed from one piece of the first membrane structure, wherein the reinforcement region has a larger layer thickness than an adjoining region of the first membrane structure. The MEMS device includes an electrode structure, wherein the electrode structure is vertically spaced apart from the first membrane structure.

公开(公告)号：US20240274573A1

公开(公告)日：2024-08-15

申请号：US18623163

申请日：2024-04-01

Applicant: Infineon Technologies AG

Inventor： Alfred Sigl ,  Alexander Frey

IPC: H01L23/00 ,  H01L21/18 ,  H01L25/065

CPC classification number: H01L24/94 ,  H01L21/187 ,  H01L25/0652

Abstract: A method of manufacturing a bonded substrate stack includes: providing a first substrate having a first hybrid interface layer, the first hybrid interface layer including a first insulator and a first metal; providing a second substrate having a second hybrid interface layer, the second hybrid interface layer including a second insulator and a second metal; surface-activating the first hybrid interface layer and the second hybrid interface layer by particle bombardment; and bringing the surface-activated first hybrid interface layer and the surface-activated second hybrid interface layer into contact, such that the first and second insulators bond together and the first and second metals bond together at the same time.

公开(公告)号：US20210391377A1

公开(公告)日：2021-12-16

申请号：US17345534

申请日：2021-06-11

Applicant: Infineon Technologies AG

Inventor： Alexander Frey ,  Bernhard Goller ,  Iris Moder ,  Ingo Muri ,  Alfred Sigl ,  Tobias Weindler

IPC: H01L27/146 ,  H01L23/544 ,  H01L21/304 ,  H01L29/78 ,  G01S17/894

Abstract: A method of manufacturing a semiconductor device is described. The method includes providing a semiconductor substrate. The semiconductor substrate includes a high-doped semiconductor substrate layer, a high-doped semiconductor device layer, and a low-doped semiconductor etch stop layer arranged between the high-doped semiconductor substrate layer and the high-doped semiconductor device layer. The high-doped semiconductor substrate layer is removed, wherein the removing includes dopant selective chemical etching stopping at the low-doped semiconductor etch stop layer. Further, the low-doped semiconductor etch stop layer is thinned to generate an exposed surface of the high-doped semiconductor device layer.