- 专利标题： Saw resonator comprising layers for attenuating parasitic waves
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申请号： US16493560申请日： 2018-03-09
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公开(公告)号： US11595021B2公开(公告)日： 2023-02-28
- 发明人: Thu Trang Vo , Jean-Sebastien Moulet , Alexandre Reinhardt , Isabelle Huyet , Alexis Drouin , Yann Sinquin
- 申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES , SOITEC
- 申请人地址： FR Paris; FR Bernin
- 专利权人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES,SOITEC
- 当前专利权人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES,SOITEC
- 当前专利权人地址： FR Paris; FR Bernin
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权： FR1752043 20170313
- 国际申请： PCT/FR2018/050559 WO 20180309
- 国际公布： WO2018/167407 WO 20180920
- 主分类号： H03H9/02
- IPC分类号： H03H9/02 ; H03H3/08 ; H03H9/145 ; H03H9/25
摘要：
The invention relates to a SAW resonator (100) comprising at least: a substrate (102); a layer (108) of piezoelectric material arranged on the substrate; a first attenuation layer (112) arranged between the substrate and the layer of piezoelectric material, and/or, when the substrate comprises at least two different layers (104, 106), a second attenuation layer (114) arranged between the two layers of the substrate; and in which the at least one attenuation layer is/are heterogeneous.
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