公开(公告)号：US20240357937A1

公开(公告)日：2024-10-24

申请号：US18685991

申请日：2022-08-17

申请人： Soitec

发明人： Cédric Charles-Alfred ,  Nadia Ben Mohamed

IPC分类号： H10N30/072 ,  H10N30/853

CPC分类号： H10N30/072 ,  H10N30/8536 ,  H10N30/8542 ,  H10N30/8548 ,  H10N30/8554

摘要： A method for transferring a useful layer to a carrier substrate comprises: a) providing a donor substrate including a donor layer; b) forming an embrittlement area by implanting species in the donor layer and defining therewith a useful layer; c) assembling the carrier substrate with the donor substrate; d) a heat treatment step including a first phase and a second phase, wherein the first phase, having a first duration, is heated to a first temperature and is suitable for maturing defects and preventing a fracture from occurring in the embrittlement area, and wherein the second phase, having a second duration, comprises a bearing at a second temperature, below the first temperature, and is suitable for causing a fracture to occur along the embrittlement area.

公开(公告)号：US20240297011A1

公开(公告)日：2024-09-05

申请号：US18575538

申请日：2022-07-19

申请人： Soitec

发明人： Cédric Charles-Alfred

IPC分类号： H01J37/20 ,  H01J37/317 ,  H10N30/04

CPC分类号： H01J37/20 ,  H01J37/3171 ,  H10N30/04

摘要： A holding device arrangement for use in an implantation process of a piezoelectric substrate comprises a substrate holding device with an elastic and thermo-conductive layer for receiving a piezoelectric substrate, and means for electrically connecting the surface of the elastic and thermo-conductive layer for receiving the piezoelectric substrate to ground potential. A method for implanting a piezoelectric substrate is performed using such holding device arrangement as described above, and an ion implanter may include such a holding device arrangement.

公开(公告)号：US12071706B2

公开(公告)日：2024-08-27

申请号：US17041371

申请日：2019-03-26

申请人： Soitec

发明人： Bruno Ghyselen

IPC分类号： C30B33/06 ,  C30B23/02 ,  C30B25/18 ,  C30B29/36 ,  C30B29/40 ,  H01L21/02

CPC分类号： C30B25/18 ,  C30B23/025 ,  C30B29/36 ,  C30B29/403 ,  H01L21/02447 ,  H01L21/0254 ,  H01L21/02598 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02543 ,  H01L21/02546

摘要： A process for producing a monocrystalline layer of AlN material comprises the transfer of a monocrystalline seed layer of SiC-6H material to a carrier substrate of silicon material, followed by the epitaxial growth of the monocrystalline layer of AlN material.

公开(公告)号：US20240170577A1

公开(公告)日：2024-05-23

申请号：US18551104

申请日：2022-03-17

申请人： Soitec

发明人： Ionut Radu ,  Guillaume Besnard ,  Sorin Cristoloveanu

IPC分类号： H01L29/786 ,  H01L21/762

CPC分类号： H01L29/78603 ,  H01L21/76254

摘要： An NCFET transistor comprises a semiconductor-on-insulator substrate for a field-effect transistor, and the NCFET transistor successively comprises, from its base to its surface: a semiconductor carrier substrate; a single ferroelectric layer, arranged in direct contact with the carrier substrate, which layer is designed to be biased so as to form a negative capacitance; and an active layer of a semiconductor material, which layer is designed to form the channel of the transistor, and is arranged in direct contact with the ferroelectric layer. The NCFET transistor further comprises a channel that is arranged in the active layer, a source and a drain that are arranged in the active layer on either side of the channel, and a gate that is arranged on the channel and is insulated from the channel by a gate dielectric.

公开(公告)号：US11976380B2

公开(公告)日：2024-05-07

申请号：US17816558

申请日：2022-08-01

申请人： Soitec

发明人： Bruno Ghyselen

IPC分类号： C30B29/32 ,  C30B23/02 ,  C30B25/18 ,  C30B29/42 ,  H01L21/02 ,  H01L21/762

CPC分类号： C30B29/32 ,  C30B23/025 ,  C30B25/183 ,  C30B29/42 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02546 ,  H01L21/02598 ,  H01L21/02645 ,  H01L21/76254

摘要： A process for producing a monocrystalline layer of GaAs material comprises the transfer of a monocrystalline seed layer of SrTiO3 material to a carrier substrate of silicon material followed by epitaxial growth of a monocrystalline layer of GaAs material.

公开(公告)号：US20240147864A1

公开(公告)日：2024-05-02

申请号：US18403485

申请日：2024-01-03

申请人： Soitec

发明人： Didier Landru

IPC分类号： H10N30/073 ,  H03H9/02 ,  H10N30/00 ,  H10N30/50 ,  H10N30/88

CPC分类号： H10N30/073 ,  H03H9/02574 ,  H10N30/10513 ,  H10N30/508 ,  H10N30/88

摘要： A hybrid structure and a method for manufacturing a hybrid structure comprising an effective layer of piezoelectric material having an effective thickness and disposed on a supporting substrate having a substrate thickness and a thermal expansion coefficient lower than that of the effective layer includes: a) a step of providing a bonded structure comprising a piezoelectric material donor substrate and the supporting substrate, b) a first step of thinning the donor substrate to form a thinned layer having an intermediate thickness and disposed on the supporting substrate, the assembly forming a thinned structure; c) a step of heat treating the thinned structure at an annealing temperature; and d) a second step, after step c), of thinning the thinned layer to form the effective layer. The method also comprises, prior to step b), a step a′) of determining a range of intermediate thicknesses that prevent the thinned structure from being damaged during step c).

公开(公告)号：US11962288B2

公开(公告)日：2024-04-16

申请号：US18248183

申请日：2022-09-15

申请人： Soitec

发明人： Eric Michoulier ,  Sylvain Ballandras ,  Thierry LaRoche

IPC分类号： H03H9/64 ,  H03H9/02

CPC分类号： H03H9/643 ,  H03H9/02653

摘要： A surface elastic wave filter has resonant cavities and comprises a composite substrate formed of a base substrate and a piezoelectric upper layer; at least one input electroacoustic transducer and an output electroacoustic transducer, arranged on the upper layer, and at least one internal reflecting structure, arranged between the input electroacoustic transducer and the output electroacoustic transducer. The internal reflecting structure comprises a first structure comprising at least one reflection grating having a first period and a second structure comprising at least one reflection grating having a second period, the first period being greater than the second period.

公开(公告)号：US20240120240A1

公开(公告)日：2024-04-11

申请号：US18546210

申请日：2022-01-28

申请人： Soitec

发明人： YoungPil Kim

IPC分类号： H01L21/66 ,  H01L21/02

CPC分类号： H01L22/26 ,  H01L21/02381 ,  H01L21/02532 ,  H01L22/12 ,  H01L21/0262

摘要： A setup method for an epitaxy process intended to form a useful layer on a receiving substrate, comprising:



a) selecting a test substrate:

having a thickness less than a usual thickness for a given substrate diameter, and/or
having a low interstitial oxygen concentration, and/or
comprising a SOI stack;


b) fixing initial temperature conditions defining temperatures to be applied to areas of the substrate;
c) forming a useful layer on the test substrate by applying the epitaxy process with the initial temperature conditions; then, measuring slip line defects;
d) fixing new temperature conditions;
e) forming a useful layer on a new test substrate of the same type, by applying the epitaxy process with the new temperature conditions; then, measuring slip line defects; and
f) comparing the quantity of slip line defects measured on the test structures and choosing the temperature conditions generating the fewest slip line defects.

公开(公告)号：US11940407B2

公开(公告)日：2024-03-26

申请号：US17044205

申请日：2019-03-19

申请人： Soitec

发明人： Bruno Ghyselen

IPC分类号： G01N27/414 ,  B01L3/00 ,  H01L21/306 ,  H01L21/762 ,  H01L29/16 ,  H01L29/161 ,  H01L29/20

CPC分类号： G01N27/4148 ,  B01L3/502715 ,  H01L21/30604 ,  H01L21/76254 ,  B01L2200/12 ,  H01L29/16 ,  H01L29/161 ,  H01L29/20 ,  H01L29/2003

摘要： A microsensor for detecting ions in a fluid, comprises: a field-effect transistor having a source, a drain, an active region between the source and the drain, and a gate disposed above the active region, an active layer, in which the active region is formed, a dielectric layer positioned beneath the active layer, a support substrate disposed under the dielectric layer and comprising at least one buried cavity located plumb with the gate of the field-effect transistor in order to receive the fluid.

公开(公告)号：US11936364B2

公开(公告)日：2024-03-19

申请号：US17043559

申请日：2019-03-14

申请人： Soitec

发明人： Sylvain Ballandras ,  Thierry LaRoche

IPC分类号： H03H9/02 ,  H03H3/08 ,  H03H9/145 ,  H03H9/25 ,  H03H9/64

CPC分类号： H03H9/02866 ,  H03H3/08 ,  H03H9/02574 ,  H03H9/02661 ,  H03H9/145 ,  H03H9/25 ,  H03H9/6489

摘要： A surface acoustic wave device comprising a base substrate, a piezoelectric layer and an electrode layer in between the piezoelectric layer and the base substrate, a comb electrode formed on the piezoelectric layer comprising a plurality of electrode means with a pitch p, defined asp=A, with A being the wavelength of the standing acoustic wave generated by applying opposite potentials to the electrode layer and comb electrode, wherein the piezoelectric layer comprises at least one region located in between the electrode means, in which at least one physical parameter is different compared to the region underneath the electrode means or fingers. A method of fabrication for such surface acoustic wave device is also disclosed. The physical parameter may be thickness, elasticity, doping concentration of Ti or number of protons obtained by proton exchange.