Invention Grant
- Patent Title: Semiconductor device having a through silicon via and methods of manufacturing the same
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Application No.: US17344138Application Date: 2021-06-10
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Publication No.: US11600552B2Publication Date: 2023-03-07
- Inventor: Ju-Bin Seo , Su-Jeong Park , Tae-Seong Kim , Kwang-Jin Moon , Dong-Chan Lim , Ju-Il Choi
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2018-0135569 20181107
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/31 ; H01L23/498 ; H01L23/522 ; H01L23/538 ; H01L27/146 ; H01L21/768

Abstract:
A semiconductor device is provided. The semiconductor device includes a first insulating interlayer disposed on a first surface of a substrate; a pad pattern disposed on a lower surface of the first insulating interlayer, the pad pattern including a first copper pattern; and a through silicon via passing through the substrate and the first insulating interlayer, and contacting the first copper pattern of the pad pattern. The through silicon via includes a first portion passing through the substrate and the first insulating interlayer, and a second portion under the first portion and extending to a portion of the first copper pattern in the pad pattern. A boundary of the through silicon via has a bent portion between the first portion and the second portion.
Public/Granted literature
- US20210296211A1 SEMICONDUCTOR DEVICE HAVING A THROUGH SILICON VIA AND METHODS OF MANUFACTURING THE SAME Public/Granted day:2021-09-23
Information query
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