Invention Grant
- Patent Title: High critical temperature metal nitride layer with oxide or oxynitride seed layer
-
Application No.: US17178187Application Date: 2021-02-17
-
Publication No.: US11600761B2Publication Date: 2023-03-07
- Inventor: Zihao Yang , Mingwei Zhu , Shriram Mangipudi , Mohammad Kamruzzaman Chowdhury , Shane Lavan , Zhebo Chen , Yong Cao , Nag B. Patibandla
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Fish & Richardson P.C.
- Main IPC: H01L39/12
- IPC: H01L39/12 ; H01L39/22 ; G02B6/12
Abstract:
A superconducting device includes a substrate, a metal oxide or metal oxynitride seed layer on the substrate, and a metal nitride superconductive layer disposed directly on the seed layer. The seed layer is an oxide or oxynitride of a first metal, and the superconductive layer is a nitride of a different second metal.
Information query
IPC分类:
