公开(公告)号：US11901477B2

公开(公告)日：2024-02-13

申请号：US17350523

申请日：2021-06-17

Applicant: Applied Materials, Inc.

Inventor： Fabio Pieralisi ,  Mingwei Zhu ,  Zihao Yang ,  Liang Zhao ,  Jeffrey L. Franklin ,  Hou T. Ng ,  Nag Patibandla

IPC: H01L33/00 ,  H01L25/075 ,  H01L33/06 ,  H01L33/32 ,  H01L33/46 ,  H01L33/50 ,  H01L33/62

CPC classification number: H01L33/0093 ,  H01L25/0753 ,  H01L33/007 ,  H01L33/06 ,  H01L33/32 ,  H01L33/46 ,  H01L33/50 ,  H01L33/62 ,  H01L2933/0066

Abstract: Exemplary processing methods include forming a group of LED structures on a substrate layer to form a patterned LED substrate. A light absorption barrier may be deposited on the patterned LED substrate. The methods may further include exposing the patterned LED substrate to light. The light may be absorbed by surfaces of the LED structures that are in contact with the substrate layer, and the light absorption barrier. The methods may still further include separating the LED structures for the substrate layer. The bonding between the LED structures and the substrate layer may be weakened by the absorption of the light by the surfaces of the LED structures in contact with the substrate layer.

公开(公告)号：US11678589B2

公开(公告)日：2023-06-13

申请号：US17178188

申请日：2021-02-17

Applicant: Applied Materials, Inc.

Inventor： Zihao Yang ,  Mingwei Zhu ,  Shriram Mangipudi ,  Mohammad Kamruzzaman Chowdhury ,  Shane Lavan ,  Zhebo Chen ,  Yong Cao ,  Nag B. Patibandla

IPC: H10N60/01 ,  H01L39/24

CPC classification number: H01L39/2416 ,  H01L39/2406

Abstract: A method of fabricating a device including a superconductive layer includes depositing a seed layer on a substrate, exposing the seed layer to an oxygen-containing gas or plasma to form a modified seed layer, and after exposing the seed layer to the oxygen-containing gas or plasma depositing a metal nitride superconductive layer directly on the modified seed layer. The seed layer is a nitride of a first metal, and the superconductive layer is a nitride of a different second metal.

公开(公告)号：US20220163834A1

公开(公告)日：2022-05-26

申请号：US17100400

申请日：2020-11-20

Applicant: Applied Materials, Inc.

Inventor： Lan Yu ,  Benjamin D. Briggs ,  Tyler Sherwood ,  Zihao Yang

IPC: G02F1/1339 ,  H01L21/66

Abstract: Processing methods may be performed to form a pixel isolation structure on a semiconductor substrate. The method may include forming a pixel isolation bilayer on the semiconductor substrate. The pixel isolation bilayer may include a high-k layer overlying a stopping layer. The method may include forming a lithographic mask on a first region of the pixel isolation bilayer. The method may also include etching the pixel isolation bilayer external to the first region. The etching may reveal the semiconductor substrate. The etching may form the pixel isolation structure.

公开(公告)号：US20210242390A1

公开(公告)日：2021-08-05

申请号：US17163274

申请日：2021-01-29

Applicant: Applied Materials, Inc.

Inventor： Zihao Yang ,  Mingwei Zhu ,  Nag B. Patibandla ,  Nir Yahav ,  Robert Jan Visser ,  Adi de la Zerda

IPC: H01L39/12 ,  G01J1/44 ,  G02B6/10

Abstract: A superconducting nanowire single photon detector (SNSPD) device includes a substrate having a top surface, an optical waveguide on the top surface of the substrate to receive light propagating substantially parallel to the top surface of the substrate, a seed layer of metal nitride on the optical waveguide, and a superconductive wire on the seed layer. The superconductive wire is a metal nitride different from the metal nitride of the seed layer and is optically coupled to the optical waveguide.

公开(公告)号：US20240145623A1

公开(公告)日：2024-05-02

申请号：US18542260

申请日：2023-12-15

Applicant: Applied Materials, Inc.

Inventor： Fabio Pieralisi ,  Mingwei Zhu ,  Zihao Yang ,  Liang Zhao ,  Jeffrey L. Franklin ,  Hou T. Ng ,  Nag Patibandla

IPC: H01L33/00 ,  H01L25/075 ,  H01L33/06 ,  H01L33/32 ,  H01L33/46 ,  H01L33/50 ,  H01L33/62

CPC classification number: H01L33/0093 ,  H01L25/0753 ,  H01L33/007 ,  H01L33/06 ,  H01L33/32 ,  H01L33/46 ,  H01L33/50 ,  H01L33/62 ,  H01L2933/0066

Abstract: Exemplary semiconductor structures may include a plurality of LED structures and a backplane layer. Exemplary semiconductor structures may also include a light barrier region positioned between the LED structures and the backplane layer. The light barrier region may be operable to absorb light at wavelengths shorter than or about 300 nm and transmit light at wavelengths greater than or about 350.

公开(公告)号：US20220013707A1

公开(公告)日：2022-01-13

申请号：US17178188

申请日：2021-02-17

Applicant: Applied Materials, Inc.

Inventor： Zihao Yang ,  Mingwei Zhu ,  Shriram Mangipudi ,  Mohammad Kamruzzaman Chowdhury ,  Shane Lavan ,  Zhebo Chen ,  Yong Cao ,  Nag B. Patibandla

IPC: H01L39/24

Abstract: A method of fabricating a device including a superconductive layer includes depositing a seed layer on a substrate, exposing the seed layer to an oxygen-containing gas or plasma to form a modified seed layer, and after exposing the seed layer to the oxygen-containing gas or plasma depositing a metal nitride superconductive layer directly on the modified seed layer. The seed layer is a nitride of a first metal, and the superconductive layer is a nitride of a different second metal.

公开(公告)号：US20200299830A1

公开(公告)日：2020-09-24

申请号：US16823182

申请日：2020-03-18

Applicant: Applied Materials, Inc.

Inventor： Mingwei Zhu ,  Zihao Yang ,  Nag B. Patibandla ,  Ludovic Godet ,  Yong Cao ,  Daniel Lee Diehl ,  Zhebo Chen

IPC: C23C14/56 ,  C23C14/06 ,  C23C14/34 ,  H01J37/34

Abstract: A structure including a metal nitride layer is formed on a workpiece by pre-conditioning a chamber that includes a metal target by flowing nitrogen gas and an inert gas at a first flow rate ratio into the chamber and igniting a plasma in the chamber before placing the workpiece in the chamber, evacuating the chamber after the preconditioning, placing the workpiece on a workpiece support in the chamber after the preconditioning, and performing physical vapor deposition of a metal nitride layer on the workpiece in the chamber by flowing nitrogen gas and the inert gas at a second flow rate ratio into the chamber and igniting a plasma in the chamber. The second flow rate ratio is less than the first flow rate ratio.

公开(公告)号：US11788883B2

公开(公告)日：2023-10-17

申请号：US17163271

申请日：2021-01-29

Applicant: Applied Materials, Inc.

Inventor： Zihao Yang ,  Mingwei Zhu ,  Nag B. Patibandla ,  Nir Yahav ,  Robert Jan Visser ,  Adi de la Zerda

IPC: G01J1/04 ,  H10N60/85 ,  H10N60/01 ,  G01J1/44

CPC classification number: G01J1/0437 ,  H10N60/0801 ,  H10N60/85 ,  G01J2001/0496 ,  G01J2001/442

Abstract: A superconducting nanowire single photon detector (SNSPD) device includes a substrate, a distributed Bragg reflector on the substrate, a seed layer of a metal nitride on the distributed Bragg reflector, and a superconductive wire on the seed layer. The distributed Bragg reflector includes a plurality of bi-layers, each bi-layer including lower layer of a first material and an upper layer of a second material having a higher index of refraction than the first material. The wire is a metal nitride different from the metal nitride of the seed material.

公开(公告)号：US11778926B2

公开(公告)日：2023-10-03

申请号：US17883508

申请日：2022-08-08

Applicant: Applied Materials, Inc.

Inventor： Mingwei Zhu ,  Zihao Yang ,  Nag B. Patibandla ,  Ludovic Godet ,  Yong Cao ,  Daniel Lee Diehl ,  Zhebo Chen

IPC: H01L21/67 ,  H10N60/01 ,  C23C14/54 ,  C23C14/34 ,  H10N60/12 ,  H10N60/85 ,  G01J1/44

CPC classification number: H10N60/0941 ,  C23C14/3464 ,  C23C14/54 ,  H10N60/124 ,  H10N60/855 ,  G01J1/44 ,  G01J2001/442

Abstract: A physical vapor deposition system includes a chamber, three target supports to targets, a movable shield positioned having an opening therethrough, a workpiece support to hold a workpiece in the chamber, a gas supply to deliver nitrogen gas and an inert gas to the chamber, a power source, and a controller. The controller is configured to move the shield to position the opening adjacent each target in turn, and at each target cause the power source to apply power sufficient to ignite a plasma in the chamber to cause deposition of a buffer layer, a device layer of a first material that is a metal nitride suitable for use as a superconductor at temperatures above 8° K on the buffer layer, and a capping layer, respectively.

公开(公告)号：US20220406960A1

公开(公告)日：2022-12-22

申请号：US17350523

申请日：2021-06-17

Applicant: Applied Materials, Inc.

Inventor： Fabio Pieralisi ,  Mingwei Zhu ,  Zihao Yang ,  Liang Zhao ,  Jeffrey L. Franklin ,  Hou T. Ng ,  Nag Patibandla

IPC: H01L33/00 ,  H01L25/075 ,  H01L33/06 ,  H01L33/32 ,  H01L33/46 ,  H01L33/50 ,  H01L33/62

Abstract: Exemplary processing methods include forming a group of LED structures on a substrate layer to form a patterned LED substrate. A light absorption barrier may be deposited on the patterned LED substrate. The methods may further include exposing the patterned LED substrate to light. The light may be absorbed by surfaces of the LED structures that are in contact with the substrate layer, and the light absorption barrier. The methods may still further include separating the LED structures for the substrate layer. The bonding between the LED structures and the substrate layer may be weakened by the absorption of the light by the surfaces of the LED structures in contact with the substrate layer.