Invention Grant
- Patent Title: Nonvolatile memory device and operating method of the same
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Application No.: US17094121Application Date: 2020-11-10
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Publication No.: US11600774B2Publication Date: 2023-03-07
- Inventor: Minhyun Lee , Houk Jang , Donhee Ham , Chengye Liu , Henry Julian Hinton , Haeryong Kim , Hyeonjin Shin
- Applicant: Samsung Electronics Co., Ltd. , President and Fellows Of Harvard College
- Applicant Address: KR Suwon-si; US MA Cambridge
- Assignee: Samsung Electronics Co., Ltd.,President and Fellows Of Harvard College
- Current Assignee: Samsung Electronics Co., Ltd.,President and Fellows Of Harvard College
- Current Assignee Address: KR Suwon-si; US MA Cambridge
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2020-0010030 20200128
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L27/24
Abstract:
A nonvolatile memory device includes a resistance switching layer, a gate on the resistance switching layer, a gate oxide layer between the resistance switching layer and the gate, and a source and a drain, spaced apart from each other, on the resistance switching layer. A resistance value of the resistance switching layer is changed based on an illumination of light irradiated onto the resistance switching layer and is maintained as a changed resistance value.
Public/Granted literature
- US20210151678A1 NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF THE SAME Public/Granted day:2021-05-20
Information query
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