A memory device including: a memory cell array including a plurality of memory cells disposed at intersections of wordlines and bitlines; an error correction circuit configured to read data from the memory cell array and to correct an error in the read data; and an error check and scrub (ECS) circuit configured to perform a scrubbing operation on the memory cell array, wherein the ECS circuit includes: a first register configured to store an error address obtained in the scrubbing operation; and a second register configured to store a page offline address received from an external device.