Invention Grant
- Patent Title: Through-circuit vias in interconnect structures
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Application No.: US17162584Application Date: 2021-01-29
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Publication No.: US11616002B2Publication Date: 2023-03-28
- Inventor: Jian-Hong Lin , Hsin-Chun Chang , Ming-Hong Hsieh , Ming-Yih Wang , Yinlung Lu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/522 ; H01L21/768 ; H01L23/528

Abstract:
An integrated circuit (IC) with through-circuit vias (TCVs) and methods of forming the same are disclosed. The IC includes a semiconductor device, first and second interconnect structures disposed on first and second surfaces of the semiconductor device, respectively, first and second inter-layer dielectric (ILD) layers disposed on front and back surfaces of the substrate, respectively, and a TCV disposed within the first and second interconnect structures, the first and second ILD layers, and the substrate. The TCV is spaced apart from the semiconductor device by a portion of the substrate and portions of the first and second ILD layers. A first end of the TCV, disposed over the front surface of the substrate, is connected to a conductive line of the first interconnect structure and a second end of the TCV, disposed over the back surface of the substrate, is connected to a conductive line of the second interconnect structure.
Public/Granted literature
- US20210375723A1 Through-Circuit Vias in Interconnect Structures Public/Granted day:2021-12-02
Information query
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