Invention Grant
- Patent Title: Three-dimensional semiconductor memory device
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Application No.: US17216867Application Date: 2021-03-30
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Publication No.: US11616076B2Publication Date: 2023-03-28
- Inventor: Geunwon Lim , SangJun Hong , Seokcheon Baek
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2018-0071518 20180621
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L27/11524 ; H01L27/11582 ; H01L27/11565 ; H01L27/1157 ; H01L27/11573 ; H01L29/423 ; H01L21/28 ; H01L27/11519 ; H01L27/11526 ; H01L27/11556

Abstract:
A three-dimensional semiconductor memory device includes a substrate, an electrode structure including gate electrodes sequentially stacked on the substrate, a source structure between the electrode structure and the substrate, vertical semiconductor patterns passing through the electrode structure and the source structure, a data storage pattern between each of the vertical semiconductor patterns and the electrode structure, and a common source pattern between the source structure and the substrate. The common source pattern has a lower resistivity than the source structure and is connected to the vertical semiconductor patterns through the source structure.
Public/Granted literature
- US20210242237A1 THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2021-08-05
Information query
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