Invention Grant
- Patent Title: Non volatile flash memory with improved verification recovery and column seeding
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Application No.: US16808955Application Date: 2020-03-04
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Publication No.: US11621045B2Publication Date: 2023-04-04
- Inventor: Xiang Yang
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Compass IP Law PC
- Main IPC: G11C16/34
- IPC: G11C16/34 ; G06F3/06 ; G11C16/04

Abstract:
An apparatus is described. The apparatus includes a non volatile memory chip. The non volatile memory chip includes an interface to receive access commands, a three dimensional array of non volatile storage cells, and, a controller to orchestrate removal of charge in a column of stacked ones of the non volatile storage cells after a verification process that determined whether or not a particular cell along the column was programmed with a correct charge amount. The removal of the charge pushes the charge out of the column by changing respective word line potentials along a particular direction along the column. Cells that are coupled to the column are programmed in the particular direction. Disturbance of neighboring cells during programming is less along the particular direction than a direction opposite that of the particular direction.
Public/Granted literature
- US20210280261A1 NON VOLATILE FLASH MEMORY WITH IMPROVED VERIFICATION RECOVERY AND COLUMN SEEDING Public/Granted day:2021-09-09
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