- 专利标题： Vertical field effect transistor with crosslink fin arrangement
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申请号： US17125850申请日： 2020-12-17
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公开(公告)号： US11621326B2公开(公告)日： 2023-04-04
- 发明人: Indira Seshadri , Ruilong Xie , Chen Zhang , Ekmini Anuja De Silva
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理商 Silvia Solano; Michael A. Petrocelli
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01L21/308 ; H01L29/78
摘要：
A semiconductor structure, and a method of making the same, includes a semiconductor substrate having an uppermost surface and a fin structure on the uppermost surface of the semiconductor substrate including n first regions extending perpendicular to the uppermost surface of the semiconductor substrate and n−1 second regions extending between and connecting each of the n first regions and parallel to the uppermost surface of the semiconductor substrate, wherein n≥3.
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