Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17361588Application Date: 2021-06-29
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Publication No.: US11626377B2Publication Date: 2023-04-11
- Inventor: Jung-Hoon Han , Dong-Wan Kim , Dongho Kim , Jaewon Seo
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Lee IP Law, P.C.
- Priority: KR10-2018-0111016 20180917
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/66 ; H01L21/67

Abstract:
A semiconductor device includes a semiconductor substrate including a chip region and an edge region around the chip region, a lower insulating layer on the semiconductor substrate, a chip pad on the lower insulating layer on the chip region, an upper insulating layer provided on the lower insulating layer to cover the chip pad, the upper and different insulating layers including different materials, and a redistribution chip pad on the chip region and connected to the chip pad. The upper insulating layer includes a first portion on the chip region having a first thickness, a second portion on the edge region having a second thickness, and a third portion on the edge region, the third portion extending from the second portion, spaced from the first portion, and having a decreasing thickness away from the second portion. The second thickness is smaller than the first thickness.
Public/Granted literature
- US20210327839A1 SEMICONDUCTOR DEVICE Public/Granted day:2021-10-21
Information query
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