- 专利标题： Semiconductor constructions, memory arrays, electronic systems, and methods of forming semiconductor constructions
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申请号： US17498468申请日： 2021-10-11
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公开(公告)号： US11626481B2公开(公告)日： 2023-04-11
- 发明人: Zailong Bian , Janos Fucsko
- 申请人： Micron Technology, Inc.
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Wells St. John P.S.
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L21/764 ; H01L27/11521 ; H01L27/105 ; H01L21/762 ; H01L27/115 ; H01L29/78
摘要：
The invention includes semiconductor constructions having trenched isolation regions. The trenches of the trenched isolation regions can include narrow bottom portions and upper wide portions over the bottom portions. Electrically insulative material can fill the upper wide portions while leaving voids within the narrow bottom portions. The trenched isolation regions can be incorporated into a memory array, and/or can be incorporated into an electronic system. The invention also includes methods of forming semiconductor constructions.
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