- 专利标题: Multilayer substrate and method of manufacturing the same
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申请号: US17751794申请日: 2022-05-24
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公开(公告)号: US11636972B2公开(公告)日: 2023-04-25
- 发明人: Shingo Ito , Naoki Gouchi , Hirotaka Fujii , Kazutaka Muraoka
- 申请人: Murata Manufacturing Co., Ltd.
- 申请人地址: JP Nagaokakyo
- 专利权人: Murata Manufacturing Co., Ltd.
- 当前专利权人: Murata Manufacturing Co., Ltd.
- 当前专利权人地址: JP Nagaokakyo
- 代理机构: Keating & Bennett, LLP
- 优先权: JPJP2016-123236 20160622,JPJP2016-169579 20160831
- 主分类号: H01F27/28
- IPC分类号: H01F27/28 ; H01F17/00 ; H01F27/32 ; H01F41/04 ; H01F41/12 ; H05K1/16 ; H01F27/29
摘要:
A multilayer substrate includes a stacked body of insulating base material layers and conductor patterns on the insulating base material layers. A thickness adjustment base material layer includes a frame portion, an opening portion inside the frame portion, and an island shaped portion inside the frame portion, and connection portions to connect the island shaped portion to the frame portion. The conductor patterns, in a stacking direction of the insulating base material layers, are wound around the island shaped portion. A line width of the connection portions is smaller than the width of the island shaped portion connected to the frame portion through the connection portions. An area overlapped with the conductor patterns is larger in the opening portion than in the frame portion and the island shaped portion.
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