Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16931585Application Date: 2020-07-17
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Publication No.: US11640959B2Publication Date: 2023-05-02
- Inventor: Jungkyu Chae , Kwanyoung Chun , Yoonjin Kim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Lee IP Law, P.C.
- Priority: KR10-2019-0147361 20191118
- Main IPC: H01L27/00
- IPC: H01L27/00 ; H01L27/02

Abstract:
A semiconductor device includes a pair of first and second dummy active regions extending in a first horizontal direction and spaced apart from each other in a second horizontal direction; a pair of first and second circuit active regions extending in the first horizontal direction and spaced apart in the second horizontal direction; and a plurality of line patterns extending in the second horizontal direction and spaced apart in the first horizontal direction. The pair of first and second dummy active regions may be between a pair of line patterns adjacent to each other among the plurality of line patterns. At least one of the first and second dummy active regions may have a width-changing portion in which a width of the at least one of the first and second dummy active regions changes in the second horizontal direction between the pair of line patterns adjacent to each other.
Public/Granted literature
- US20210151426A1 SEMICONDUCTOR DEVICE Public/Granted day:2021-05-20
Information query
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