Invention Grant
- Patent Title: Selectors for memory elements
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Application No.: US17806332Application Date: 2022-06-10
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Publication No.: US11642883B2Publication Date: 2023-05-09
- Inventor: Boon Bing Ng , Rui Pan , Mohan Kumar Sudhakar , Brendan Hall
- Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
- Applicant Address: US TX Spring
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Spring
- Agency: Foley & Lardner LLP
- Main IPC: B41J2/045
- IPC: B41J2/045 ; B41J2/01

Abstract:
In some examples, a circuit includes a data line, an input line, a first memory element, and a decoder to receive an address and to enable the first memory element for access in response to the address. The selector is responsive to the data line to select the first memory element, where the selector is to select the first memory element responsive to the data line having a first value, and where the data line is to communicate data of a second memory element in response to the second memory element being enabled for access. The input line is to communicate data of the first memory element in response to the first memory element being selected by the selector.
Public/Granted literature
- US20220297423A1 SELECTORS FOR MEMORY ELEMENTS Public/Granted day:2022-09-22
Information query
IPC分类: