Invention Grant
- Patent Title: Semiconductor substrate
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Application No.: US17744799Application Date: 2022-05-16
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Publication No.: US11644702B2Publication Date: 2023-05-09
- Inventor: Ikuo Matsunaga
- Applicant: Japan Display Inc.
- Applicant Address: JP Tokyo
- Assignee: Japan Display Inc.
- Current Assignee: Japan Display Inc.
- Current Assignee Address: JP Tokyo
- Agency: Michael Best & Friedrich LLP
- Priority: JP 2016220419 2016.11.11
- Main IPC: G02F1/1333
- IPC: G02F1/1333 ; G02F1/1362 ; G02F1/13357 ; H01L27/32 ; H01L51/00 ; H01L51/52 ; H01R12/62 ; H05K3/36

Abstract:
A display device includes a base film including a first region and a plurality of second regions having the first region therebetween; an inorganic insulating film on the base film, the inorganic insulating film being in contact with the plurality of second regions of the base film; a plurality of first pixels overlapping the first region; and a plurality of second pixels overlapping the plurality of second regions with the inorganic insulating film being between the plurality of second pixels and the plurality of second regions. The inorganic insulating film is divided by the first region and is discontinuous between the plurality of second regions.
Public/Granted literature
- US20220276527A1 SEMICONDUCTOR SUBSTRATE Public/Granted day:2022-09-01
Information query
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