Invention Grant
- Patent Title: Capacitor structure and method for manufacturing the same
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Application No.: US17136075Application Date: 2020-12-29
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Publication No.: US11646343B2Publication Date: 2023-05-09
- Inventor: Teng-Chuan Hu , Chu-Fu Lin , Chun-Hung Chen
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsinchu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C.
- Main IPC: H01L49/02
- IPC: H01L49/02
Abstract:
A capacitor structure comprises a substrate having a first side and a second side opposite to the first side; a plurality of first trenches formed on the first side of the substrate; a plurality of second trenches formed on the second side of the substrate; a first capacitor extending along the first side and into the first trenches; and a second capacitor extending along the second side and into the second trenches.
Public/Granted literature
- US20220208958A1 CAPACITOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2022-06-30
Information query
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