Invention Grant
- Patent Title: Plasma position control for extreme ultraviolet lithography light sources
-
Application No.: US16900735Application Date: 2020-06-12
-
Publication No.: US11650508B2Publication Date: 2023-05-16
- Inventor: Ssu-Yu Chen , Hsin-Feng Chen , Chi Yang , Li-Jui Chen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: G03F7/20
- IPC: G03F7/20

Abstract:
A system for controlling plasma position in extreme ultraviolet lithography light sources may include a vacuum chamber, a droplet generator to dispense a stream of droplets into the vacuum chamber, wherein the droplets are formed from a metal material, a laser light source to fire a plurality of laser pulses, including at least a first pulse and a second pulse, into the vacuum chamber, a sensor to detect an observed plasma position within the chamber, wherein the observed plasma position comprises a position at which the plurality of laser pulses vaporizes a droplet of the stream of droplets to produce a plasma that emits extreme ultraviolet radiation, and a first feedback loop connecting the sensor to the laser light source, wherein the first feedback loop adjusts a time delay between the first and second pulses to minimize a difference between the observed plasma position and a target plasma position.
Public/Granted literature
- US20210389678A1 PLASMA POSITION CONTROL FOR EXTREME ULTRAVIOLET LITHOGRAPHY LIGHT SOURCES Public/Granted day:2021-12-16
Information query
IPC分类: