Invention Grant
- Patent Title: Integrated circuit and method of forming same
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Application No.: US17031547Application Date: 2020-09-24
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Publication No.: US11651133B2Publication Date: 2023-05-16
- Inventor: Po-Sheng Wang , Chao Yuan Cheng , Chien-Chi Tien , Yangsyu Lin
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: G06F30/392
- IPC: G06F30/392 ; H01L27/02 ; H01L27/118 ; G06F119/18

Abstract:
A method of forming an integrated circuit includes placing a first cell layout design of the integrated circuit on a layout design, and manufacturing the integrated circuit based on the layout design. Placing the first cell layout design includes placing a first active region layout pattern adjacent to a first cell boundary, placing a second active region layout pattern adjacent to a second cell boundary, and placing a first set of active region layout patterns between the first and second active region layout patterns, according to a first set of guidelines. The first set of guidelines includes selecting transistors of a first type with a first driving strength and transistors of a second type with a second driving strength. In some embodiments, the first, second and first set of active region layout patterns extend in the first direction, and are on a first layout level.
Public/Granted literature
- US20210279396A1 INTEGRATED CIRCUIT AND METHOD OF FORMING SAME Public/Granted day:2021-09-09
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