Invention Grant
- Patent Title: High resistivity wafer with heat dissipation structure and method of making the same
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Application No.: US17080855Application Date: 2020-10-27
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Publication No.: US11652017B2Publication Date: 2023-05-16
- Inventor: Purakh Raj Verma , Kuo-Yuh Yang , Chia-Huei Lin
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN 1811105431.9 2018.09.21
- The original application number of the division: US16170067 2018.10.25
- Main IPC: H01L23/36
- IPC: H01L23/36 ; H01L21/48 ; H01L23/367
Abstract:
A high resistivity wafer with a heat dissipation structure includes a high resistivity wafer and a metal structure. The high resistivity wafer includes a heat dissipation region and a device support region. The high resistivity wafer consists of an insulating material. The metal structure is only embedded within the heat dissipation region of the high resistivity wafer. The metal structure surrounds the device support region.
Public/Granted literature
- US20210043533A1 HIGH RESISTIVITY WAFER WITH HEAT DISSIPATION STRUCTURE AND METHOD OF MAKING THE SAME Public/Granted day:2021-02-11
Information query
IPC分类:
