Invention Grant
- Patent Title: Semiconductor devices with an electrically tunable emitter and methods for time-of-flight measurements using an electrically tunable emitter
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Application No.: US16638625Application Date: 2018-07-27
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Publication No.: US11652177B2Publication Date: 2023-05-16
- Inventor: Martin Münzer , Peter Trattler
- Applicant: ams AG
- Applicant Address: AT Premstaetten
- Assignee: AMS AG
- Current Assignee: AMS AG
- Current Assignee Address: AT Premstaetten
- Agency: MH2 Technology Law Group, LLP
- Priority: EP 186665 2017.08.17
- International Application: PCT/EP2018/070483 2018.07.27
- International Announcement: WO2019/034395A 2019.02.21
- Date entered country: 2020-02-12
- Main IPC: G01S7/486
- IPC: G01S7/486 ; H01L31/0216 ; H01L31/107 ; G01S7/4865
Abstract:
The semiconductor device comprises an emitter of electromagnetic radiation, a photodetector enabling a detection of electromagnetic radiation of a specific wavelength, a filter having a passband including the specific wavelength, the filter being arranged on the photodetector, the emitter and/or the filter being electrically tunable to the specific wavelength, and a circuit configured to determine a time elapsed between emission and reception of a signal that is emitted by the emitter and then received by the photodetector.
Public/Granted literature
- US20210135023A1 SEMICONDUCTOR DEVICE AND METHOD FOR TIME-OF-FLIGHT MEASUREMENTS Public/Granted day:2021-05-06
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