Invention Grant
- Patent Title: Dual conversion gain image sensor pixels
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Application No.: US17411531Application Date: 2021-08-25
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Publication No.: US11658201B2Publication Date: 2023-05-23
- Inventor: Gang Chen , Zhi Hao , Yi Zhang
- Applicant: Silead Inc.
- Applicant Address: CN Shanghai
- Assignee: SILEAD INC.
- Current Assignee: SILEAD INC.
- Current Assignee Address: CN Shanghai
- Agency: Haynes and Boone, LLP
- Main IPC: H04N5/355
- IPC: H04N5/355 ; H01L27/146 ; H04N5/3745 ; H01L27/148

Abstract:
An image sensor includes an image sensor pixel array having pixels. Each pixel includes a continuous active region having a first portion and a second portion extending from the first portion. A photodiode, a reset transistor, a drive transistor, and a select transistor are formed in and over the first portion. The photodiode and the reset transistor define a floating diffusion region therebetween. A switch transistor is formed in and over the second portion and includes a first source/drain region and a second source/drain region. The first source/drain region is included in the floating diffusion region. The second source/drain region interfaces a doped region formed in the second region. The pixel also includes a gate structure disposed directly over the doped region. By controlling the switch transistor, the pixel may operate in a high conversion gain mode or a low conversion gain mode to accommodate different illumination or exposure conditions.
Public/Granted literature
- US20230064181A1 Dual Conversion Gain Image Sensor Pixels Public/Granted day:2023-03-02
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