Invention Grant
- Patent Title: Sub-block programming mode with multi-tier block
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Application No.: US17461922Application Date: 2021-08-30
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Publication No.: US11664075B2Publication Date: 2023-05-30
- Inventor: Yu-Chung Lien , Jiahui Yuan , Tomer Eliash
- Applicant: SanDisk Technologies LLC
- Applicant Address: US TX Addison
- Assignee: SanDisk Technologies LLC
- Current Assignee: SanDisk Technologies LLC
- Current Assignee Address: US TX Addison
- Agency: Vierra Magen Marcus LLP
- Main IPC: G11C16/10
- IPC: G11C16/10 ; G11C16/16 ; G11C16/04 ; G11C16/08 ; G11C16/26

Abstract:
Apparatuses and techniques are described for programming a multi-tier block in which sub-blocks are arranged in respective tiers. When a program operation involves the source-side sub-block, the NAND strings are pre-charged from the source line. When a program operation involves the drain-side sub-block, the NAND strings are pre-charged from the bit line. When a program operation involves an interior sub-block, the NAND strings can be pre-charged from the bit line if all sub-blocks on the drain side of the interior sub-block are erased, or from the source line if all sub-blocks on the source side of the interior sub-block are erased. A table can be provided which identifies free blocks, free sub-blocks and a corresponding program order. If such a table is not available, the sub-blocks can be read to determine whether they are programmed.
Public/Granted literature
- US20230069260A1 SUB-BLOCK PROGRAMMING MODE WITH MULTI-TIER BLOCK Public/Granted day:2023-03-02
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